Lift-off process for GaN films formed on SiC substrates and devices fabricated using the method

摘要

One embodiment of a method according to the present invention for fabricating a high light extraction photonic device comprises growing a lift-off layer on a substrate and growing an epitaxial semiconductor device structure on the lift-off layer such that the lift-off layer is sandwiched between said device structure and substrate. The epitaxial semiconductor structure comprises an emitter adapted to emit light in response to a bias. The device structure, lift-off layer and substrate is flip-chip mounted on a submount such that the epitaxial semiconductor device structure is sandwiched between the submount and lift-off layer. The lift-off layer is removed to separate the substrate from the device structure. Different removal methods can be used such as removal by a photo electrochemical etch or by illuminating the lift-off layer with laser light.