发明名称 |
Method of synthesizing silicon wires |
摘要 |
A method of synthesizing silicon wires generally includes the steps of: providing a substrate; forming a copper catalyst particle layer on a top surface of the substrate; heating the reactive device at a temperature of above 450° C. in a flowing protective gas; and introducing a mixture of a protective gas and a silicon-based reactive gas at a temperature of above 450° C. at a pressure of below 700 Torr, thereby forming the silicon wires on the substrate.
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申请公布号 |
US7825036(B2) |
申请公布日期 |
2010.11.02 |
申请号 |
US20060525440 |
申请日期 |
2006.09.22 |
申请人 |
TSINGHUA UNIVERSITY;HON HAI PRECISION INDUSTRY CO., LTD. |
发明人 |
YAO YUAN;XU LI-GUO;FAN SHOU-SHAN |
分类号 |
H01L21/469 |
主分类号 |
H01L21/469 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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