发明名称 METHOD OF MANUFACTURING SOI SUBSTRATE
摘要 PURPOSE: A SOI substrate manufacturing method is provided to improve a property of a manufactured SOI substrate by forming a recycled bond substrate which has reduced oxygen defects and impurity elements. CONSTITUTION: A first process forms an embrittled area on a bond substrate by irradiating ions on a bond substrate(110). A second process combines the bond substrate with an insulating layer(114) in-between. The bond substrate is divided on the embrittled area. A semiconductor layer(116) is formed on the bond substrate with the insulation layer in-between.
申请公布号 KR20100116536(A) 申请公布日期 2010.11.01
申请号 KR20100033771 申请日期 2010.04.13
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 HANAOKA KAZUYA;TSUYA HIDEKI;NAGAI MASAHARU
分类号 H01L27/12;H01L21/20 主分类号 H01L27/12
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