发明名称 |
METHOD OF MANUFACTURING SOI SUBSTRATE |
摘要 |
PURPOSE: A SOI substrate manufacturing method is provided to improve a property of a manufactured SOI substrate by forming a recycled bond substrate which has reduced oxygen defects and impurity elements. CONSTITUTION: A first process forms an embrittled area on a bond substrate by irradiating ions on a bond substrate(110). A second process combines the bond substrate with an insulating layer(114) in-between. The bond substrate is divided on the embrittled area. A semiconductor layer(116) is formed on the bond substrate with the insulation layer in-between. |
申请公布号 |
KR20100116536(A) |
申请公布日期 |
2010.11.01 |
申请号 |
KR20100033771 |
申请日期 |
2010.04.13 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
HANAOKA KAZUYA;TSUYA HIDEKI;NAGAI MASAHARU |
分类号 |
H01L27/12;H01L21/20 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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