SIC/C COMPOSITE POWDERS AND A HIGH PURITY AND HIGH STRENGTH REACTION BONDED SIC USING THE SAME

摘要

PURPOSE: Silicon carbide/carbon composite powder and high purity and high strength reaction bonded silicon carbide using the same are provided to be used in a reaction bonded silicon carbide jig for a next generation semiconductor high temperature process, components for a high temperature vacuum device, and heater components for a semiconductor process. CONSTITUTION: A method for manufacturing silicon carbide/carbon composite powder comprises the following steps. Silicon and carbon are mixed by alcohol solvent so that a mole ratio of one carbon element is 1.6~4.5 based on one mole of silicon element. A hydrolysis catalyst of 0.05~0.14 mole ratio based on one silicon mole is added to the mixture. The mixture is made gel or solid.