| 摘要 |
<p>PURPOSE: A manufacturing method of a semiconductor device is provided to uniformly form a gate and to increase the channel length of a transistor. CONSTITUTION: A manufacturing method of a semiconductor device forms a first groove by etching an active region and the formation region of an element isolation layer on a semiconductor substrate(100). The element isolation layer exposed by a first groove is selectively etched. A second groove having the width which is wider than the first groove is formed and is connected to the first groove by etching the upper end part of the exposed active region.</p> |
