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发明名称
TERMINATION STRUCTURE
摘要
A power semiconductor device having a termination structure that includes a polysilicon field plate, a metallic field plate, and a polysilicon equipotential ring.
申请公布号
KR100990502(B1)
申请公布日期
2010.10.29
申请号
KR20087006620
申请日期
2006.09.15
申请人
发明人
分类号
H01L23/58
主分类号
H01L23/58
代理机构
代理人
主权项
地址
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