| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thermosetting die-bonding film which can remarkably reduce working hours, when die bonding a semiconductor chip, and a dicing die-bonding film including the thermosetting die-bonding film and a dicing film layered to each other. <P>SOLUTION: This thermosetting die-bonding film which are to be used to produce a semiconductor device includes a thermosetting catalyst in a non-crystalline state in an amount within a range from 0.2 to 1 pts.wt., based on 100 pts.wt. of an organic component in the film. <P>COPYRIGHT: (C)2011,JPO&INPIT |
