| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an inexpensive and high performance semiconductor sensor by executing both simplification of processes and countermeasures against electrostatic attraction, and to provide a method for manufacturing the same. <P>SOLUTION: The semiconductor sensor employs a structure which is manufactured by a simple process wherein a groove separating the center of a three layer semiconductor layer of a semiconductor substrate 11 is provided to form first and second semiconductor layers 13, 14. A bottom direction clearance 17f of a space portion 17 is ensured so that the movable gate electrode 15 hardly has the influence of electrostatic attraction. The electrostatic attraction in the direction between sidewalls for the movable gate electrode 15 is also canceled. Accordingly, an unwanted force to the movable gate electrode 15 is removed to improve sensitivity. <P>COPYRIGHT: (C)2011,JPO&INPIT |
