| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that is improved in noise resistance while including a support for suppressing warpage of a substrate. SOLUTION: The semiconductor device includes a first carrier substrate (printed wiring board 5a) mounted with a first semiconductor chip (LSI chip 1), a first electrode (support 3a) supporting the first carrier substrate and covering the first semiconductor chip, a dielectric layer 4 provided on the first electrode, a second electrode (ground plane 11) opposed to the first electrode with the dielectric layer 4 interposed, a second carrier substrate (printed wiring board 5b) arranged on the second electrode and mounted with a second semiconductor chip (LSI chip 2), and a third electrode (support 3b) supporting the second carrier substrate and covering the second semiconductor chip, wherein the first electrode or the second electrode is electrically connected to a power supply terminal of the second semiconductor chip and a predetermined voltage is applied between the first electrode and the second electrode. COPYRIGHT: (C)2011,JPO&INPIT
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