PROCESSES AND AN APPARATUS FOR MANUFACTURING HIGH PURITY POLYSILICON

摘要

In one embodiment, a method includes feeding at least one silicon source gas and polysilicon silicon seeds into a reaction zone; maintaining the at least one silicon source gas at a sufficient temperature and residence time within the reaction zone so that a reaction equilibrium of a thermal decomposition of the at least one silicon source gas is substantially reached within the reaction zone to produce an elemental silicon; wherein the decomposition of the at least one silicon source gas proceeds by the following chemical reaction: 4HSiCl3 ^- -> Si + 3SiCl4 + 2H2, wherein the sufficient temperature is a temperature range between about 600 degrees Celsius and about 1000 degrees Celsius; and c) maintaining a sufficient amount of the polysilicon silicon seeds in the reaction zone so as to result in the elemental silicon being deposited onto the polysilicon silicon seeds to produce coated particles.