| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor apparatus by which a first semiconductor device to be a primary chip is formed in a small thickness and the semiconductor apparatus having a second semiconductor device bonded to the surface of the first semiconductor device is efficiently manufactured. <P>SOLUTION: The method includes: a back side grinding step of grinding the back side of the device area of a wafer including a device area 23 which is demarcated by a plurality of streets and where first semiconductor devices 22 are formed and an outer peripheral excess region 24 surrounding it, to form the device area to a predetermined finished thickness, and also forming an annular reinforcement part by leaving an area corresponding to the outer peripheral excessive region on the reverse side of the wafer; a device bonding step of bonding a second semiconductor device to the surface of each of the first semiconductor devices; and a wafer dividing step of dividing the wafer along the streets to separate the device area of the wafer into individual semiconductor devices in each of which the second semiconductor device is bonded to the surface of the first semiconductor device. <P>COPYRIGHT: (C)2011,JPO&INPIT |
