| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To reduce a write time by optimizing an end detecting method of a writing operation. <P>SOLUTION: The nonvolatile semiconductor memory device includes a memory cell array provided to write in one page unit and a control circuit provided to control the write-in. The control circuit includes: a means for performing a first detection for memory cells in a part provided as a unit smaller than one page, concurrently with the write-in to memory cells becoming objective for write-in in one page; and a means that subjects the memory cells in one page to a second detection considering a failure relief due to a redundant region, when the number of memory cells of the unwritten state in the part at the first detection becomes equal to or less than a first constant, and that ends the writing operation when the number of memory cells of the unwritten state in one page becomes equal to or less than a second constant. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
