发明名称 SEMICONDUCTOR DEVICE AND SYSTEM
摘要 <p><P>PROBLEM TO BE SOLVED: To reliably initialize an internal node of a semiconductor device when a supply voltage is decreased. <P>SOLUTION: A first transistor has one end and a gate connected to a first power supply line provided with a supply voltage, and the other end connected to a first node. A second transistor has a gate connected to a second node, one end connected to the first node and the other end connected to a third node. A third transistor has one end connected to a second power supply line and a gate connected to a fourth node, and the other end connected to the third node. A first bias voltage production circuit supplies a first bias voltage to the second node. A second bias voltage production circuit supplies a second bias voltage to the fourth node. In this way, a supply voltage when the third node changes in voltage from a certain level to a different level can be set greater, and when the supply voltage is reduced, the internal node of a semiconductor device can be reliably initialized in accordance with change of a voltage on the third node. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2010245828(A) 申请公布日期 2010.10.28
申请号 JP20090092145 申请日期 2009.04.06
申请人 FUJITSU SEMICONDUCTOR LTD 发明人 KOKAYU MITSUHIRO;YAMAZAKI HIROKAZU;MORITA KEIZO;YAMANE KAZUAKI;FUJII YASUHIRO;TAKAI KAZUAKI;KAWASHIMA SHOICHIRO
分类号 H03K17/22;G06F1/24 主分类号 H03K17/22
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