发明名称 PLASMA PROCESSING METHOD AND DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a plasma processing method and device capable of securing, with a high degree of reliability, and achieving a desired resultant state of the processing in subjecting a workpiece to processing by atmospheric-pressure plasma. <P>SOLUTION: The plasma processing method includes a step of supplying a mixed gas 8 of inert gas and a reactive gas to a space 2 in the vicinity of a location where an atmospheric pressure is present, while applying an electric field for generating plasma 11, and a step of irradiating a workpiece (W) with the generated plasma 11 for subjecting the workpiece (W) to plasma processing. In this method, the concentration of the reactive gas of the mixed gas 8 supplied to the space 2 is detected by a gas concentration detection means 15, after which, based on the detection result, a control part 14 decides the capability, that is, whether the performance of the plasma 11 emitted to the workpiece (W) is acceptable or not. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010244948(A) 申请公布日期 2010.10.28
申请号 JP20090094440 申请日期 2009.04.08
申请人 PANASONIC CORP 发明人 TSUJI HIROYUKI;INOUE KAZUHIRO;MATSUMORI MASASHI;NAKATSUKA SHIGEKI
分类号 H05H1/24;B08B7/00;H01L21/3065 主分类号 H05H1/24
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