发明名称 |
WET SOLUBLE LITHOGRAPHY |
摘要 |
A system to form a wet soluble lithography layer on a semiconductor substrate includes providing the substrate, depositing a first layer comprising a first material on the substrate, and depositing a second layer comprising a second material on the substrate. In an embodiment, the first material comprises a different composition than the second material and one of the first layer and the second layer includes silicon.
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申请公布号 |
US2010273321(A1) |
申请公布日期 |
2010.10.28 |
申请号 |
US20090430614 |
申请日期 |
2009.04.27 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
WANG CHIEN-WEI;CHANG CHING-YU |
分类号 |
H01L21/265;H01L21/306;H01L21/31 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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