发明名称 WET SOLUBLE LITHOGRAPHY
摘要 A system to form a wet soluble lithography layer on a semiconductor substrate includes providing the substrate, depositing a first layer comprising a first material on the substrate, and depositing a second layer comprising a second material on the substrate. In an embodiment, the first material comprises a different composition than the second material and one of the first layer and the second layer includes silicon.
申请公布号 US2010273321(A1) 申请公布日期 2010.10.28
申请号 US20090430614 申请日期 2009.04.27
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 WANG CHIEN-WEI;CHANG CHING-YU
分类号 H01L21/265;H01L21/306;H01L21/31 主分类号 H01L21/265
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