| 摘要 |
<p>Provided are a method and an apparatus for deposition-forming a semiconductor on a substrate by close-spaced sublimation technology, wherein the method comprises: 1) filling the semiconductor materials into a crucible: passing the semiconductor materials carried by a carrier gas through a passage to enter into the crucible placed in a vacuum chamber for deposition of film; 2) heating the crucible to sublimate the heated semiconductor materials into vapor and depositing vapor onto a substrate. The apparatus comprises a device for supplying the semiconductor materials, a vacuum deposition chamber, a crucible placed in the vacuum deposition chamber and a substrate positioned over the crucible, wherein the device for supplying the semiconductor materials is communicated with the crucible via a pipe and also is used to supply the semiconductor materials and the carrier gas. Further, a porous membrane is provided between the crucible and the substrate, the semiconductor materials carried by the carrier gas are distributed into the crucible by means of a feed distributor.</p> |
