| 摘要 |
PURPOSE: The semiconductor memory device and the manufacturing method thereof equipped with the floating body capacitor. The accumulated hole layer can be controlled easily. Therefore, the Chung of the electric charge, and discharge facilitates. CONSTITUTION: The semiconductor memory device and the manufacturing method thereof equipped with the floating body capacitor. The SOI substrate(100), element isolation film, transistor, capacitor, contact plug is included. The Base substrate(110) including the conductive well(120), and the buried oxide and device forming layer are laminated in the surface and the SOI substrate is composed.
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