| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist pattern forming method forming a minute multilayered resist pattern having a complicated three-dimensional structure such as a hollow structure by using a liquid resist such as a KrF resist or an ArF resist. <P>SOLUTION: The resist pattern forming method comprises a first process for forming a first resist film by using a first chemical amplification type resist composition and performing selective exposure on the first resist film, a second process for forming a second resist film by applying a second chemical amplification type resist composition onto the first resist film and performing selective exposure on the second resist film, and a process for developing the first resist film and the second resist film to form a multilayered resist pattern. The first chemical amplification type resist composition is a positive resist composition increasing its solubility to an alkali developer by exposure. <P>COPYRIGHT: (C)2011,JPO&INPIT |
