| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method and an apparatus for separating gasses, in each of which, impurities are removed effectively from the exhaust gas from a semiconductor production apparatus using krypton, xenon and neon to circularly reuse krypton etc. <P>SOLUTION: The method for separating gasses, namely, the method for separating/removing an impurity component in a gaseous mixture containing at least one of krypton, xenon and neon comprises: a catalytic reaction step of converting ammonia and nitrogen oxide in the impurity component into nitrogen and steam by using a denitration catalyst and removing at least any of ammonia and nitrogen oxide; a denitration step of converting nitrogen oxide into nitrogen and steam; a first adsorption/separation step of adsorbing/separating ammonia and steam; a second adsorption/separation step of adsorbing krypton, xenon and neon on a second adsorbent and discharging the difficult-to-adsorb impurity component; a desorption/recovery step of desorbing/recovering the gas component adsorbed on the second adsorbent at the second adsorption/separation step; and a third adsorption/separation step of bringing an easy-to-adsorb gas component into contact with a third adsorbent to adsorb/separate the easy-to-adsorb gas component. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
