| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride-based semiconductor laser of high reliability and high output by forming a window region without deteriorating contact resistance, in a laser process where a nitrogen material gas containing a hydrazine derivative is used for crystal growth of p-type layer of a nitride semiconductor. SOLUTION: In this method of manufacturing the nitride semiconductor laser, an n-type cladding layer 2, an n-type guide layer 3, an active layer 4 and an undoped guide layer 5 are formed on an n-type GaN substrate in an MOCVD method. An SiO<SB>2</SB>film 15 is formed as an impurity-supplying source on the same layer 5, and the entire surface is covered with a protective film 16. By performing high-temperature heat treatment of about 1,100°C or above, an n-type impurity solid phase diffusion region 11 is formed by diffusing Si, and the window region 12 is selectively formed in the active layer 4 of the vicinity region of a planned part 14 for forming a laser end surface. After removing both the films 15 and 16, a p-type layer is grown on the laminated guide layer 5 with an Mg as a dopant and an ammonia and an hydrazine dielectric as a nitrogen-supplying source by the MOCVD method. COPYRIGHT: (C)2011,JPO&INPIT
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