发明名称 Thin Film Deposition via Charged Particle-Depleted Plasma Achieved by Magnetic Confinement
摘要 A method and apparatus for forming thin film materials via a plasma deposition process in the presence of a magnetic field. A precursor is delivered to a deposition chamber and activated to form a plasma. The plasma may be initiated in the presence of a magnetic field or subjected to a magnetic field after initiation. The plasma includes ionized and neutral species derived from the precursor and the magnetic field manipulates the plasma to effect a reduction in the population of ionized species and an enhancement of the population of neutral species. A thin film material is subsequently formed from the resulting neutral-enriched deposition medium. The method permits formation of thin film materials having a low density of defects. In one embodiment, the thin film material is a photovoltaic material and the suppression of defects leads to an enhancement in photovoltaic efficiency.
申请公布号 US2010273315(A1) 申请公布日期 2010.10.28
申请号 US20090429637 申请日期 2009.04.24
申请人 OVSHINSKY STANFORD R 发明人 OVSHINSKY STANFORD R.
分类号 H01L21/20;B05D5/12 主分类号 H01L21/20
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