| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a technology for improving processing precision of memory cells forming a nonvolatile memory in a semiconductor device including the nonvolatile memory. <P>SOLUTION: A polysilicon film PF2 is formed in such a manner as to cover a polysilicon film PF1 and a dummy gate electrode DMY1. Thus, the polysilicon film PF2 is formed reflecting shapes of a step DIF and a gap groove GAP. Particularly, in the polysilicon film PF2 covering the gap groove GAP, a concave part CON is formed. Subsequently, an antireflective film BARC is formed over the polysilicon film PF2. Thus, the antireflective film BARC having high flowability flows from a higher region to a lower region of the step DIF, but is stored sufficiently in the concave part CON. Accordingly, the antireflective film BARC is supplied from the concave part CON so as to compensate for the amount of the antireflective film BARC flowing out therefrom. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
