| 摘要 |
PROBLEM TO BE SOLVED: To provide a film deposition method of depositing a film at a high bottom coverage rate for fine holes of high aspect ratio with good in-plane uniformity in film thickness distribution. SOLUTION: A substrate W is held in a vacuum chamber 1, and a sputter gas is introduced so that a high-pressure region of 10 to 30 Pa is held in the chamber. A DC voltage is applied to a target 2 disposed opposite in proximity to a substrate and a high-frequency bias voltage is applied to the substrate to generate a convolution plasma, composed of target-side DC plasma and substrate-side high-frequency bias plasma, between the target and substrate, thereby sputtering the target to deposit a film. A magnet unit 6 for generating a magnetic field locally below the target is arranged while offset outward from the target center in a radius direction, and rotated and moved during film depositing so that an outer periphery of the target except at least its center portion is eaten away. COPYRIGHT: (C)2011,JPO&INPIT |
