| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which includes a semiconductor circuit with an active layer, in which concentration of impurities doped into a semiconductor film is controlled. SOLUTION: In the semiconductor device including a first silicon nitride film, having a thickness of 200 to 500 nm formed on a glass substrate; a second silicon nitride film formed on the first silicon nitride film; and an amorphous semiconductor film which is formed on the second silicon nitride film and includes a region which serves as a channel formation region, the configuration includes boron at the interface between the first insulating film and the second insulating film. COPYRIGHT: (C)2011,JPO&INPIT
|
