发明名称 METHOD FOR RECOVERING DAMAGE OF LOW DIELECTRIC CONSTANT INSULATING FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method for recovering damage of a low dielectric constant insulating film, the method sufficiently recovering electrical characteristics of the low dielectric constant insulating film itself while suppressing oxidation of buried metal and generation of pattern defaults. SOLUTION: After processing of a low dielectric constant insulating film is completed, a damaged functional group generated in a surface of the low dielectric constant insulating film by the processing is substituted with a hydrophobic functional group (ST.2), and a damaged component present under a dense layer generated in the surface of the low dielectric constant insulating film by the substitution treatment is recovered by using an ultraviolet heat treatment (ST.3). COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010245562(A) 申请公布日期 2010.10.28
申请号 JP20100160256 申请日期 2010.07.15
申请人 TOKYO ELECTRON LTD 发明人 ASAKO RYUICHI;OSAWA YUSUKE
分类号 H01L21/312;H01L21/316;H01L21/768;H01L23/522 主分类号 H01L21/312
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