| 摘要 |
PROBLEM TO BE SOLVED: To provide a resistance change-type nonvolatile storage device capable of suppressing a resistance variation and improving a manufacturing yield. SOLUTION: The resistance change-type nonvolatile storage device is equipped with: a substrate 21; first and second diffusion layers 22a, 29a formed on the substrate 21; interlayer insulating layers formed on the first and second diffusion layers 22a, 29a; a resistance change element 36 formed at the interlayer insulating layers; and wiring 26 formed on the interlayer insulating layers. The impedance of a first electrical connection path from the wiring 26 to a first diffusion layer 22a through the resistance change element 36 is higher than the impedance of a second electrical connection path from the wiring 26 to the second diffusion layer 29a, and a first region 34 constituting the first electrical connection path is a plane layout separable from a second region 38 constituting the second electrical connection path. COPYRIGHT: (C)2011,JPO&INPIT
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