| 发明名称 |
METHOD FOR FABRICATING SILICON AND/OR GERMANIUM NANOWIRES |
| 摘要 |
The invention relates to a method for fabricating silicon and/or germanium nanowires on a substrate, comprising a step of bringing a precursor comprising silicon and/or a precursor comprising germanium into contact with a compound comprising copper oxide present on the said substrate, by means of which growth of nanowires takes place.
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| 申请公布号 |
US2010273316(A1) |
申请公布日期 |
2010.10.28 |
| 申请号 |
US20100767707 |
申请日期 |
2010.04.26 |
| 申请人 |
COMMISSARIAT A L' ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES |
发明人 |
RENARD VINCENT;JOUSSEAUME VINCENT;JUBLOT MICHAEL |
| 分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
| 代理机构 |
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