| 摘要 |
A semiconductor device includes: a well of a second conductive type formed on or above a semiconductor substrate of a first conductive type; a first diffusion layer of the second conductive type formed in a surface portion of the well; a second diffusion layer of the first conductive type formed separately from the first diffusion layer in the surface portion of the well; first to third first-layer conductive layers formed above the well; and first to third second-layer conductive layers formed above the first to third first-layer conductive layers. The first second-layer conductive layer, the first first-layer conductive layer, the first diffusion layer and the well are conductively connected as a first conductive path. The second second-layer conductive layer, the second first-layer conductive layer, and the second diffusion layer are conductively connected as a second conductive path. The third second-layer conductive layer, and the third first-layer conductive layer are conductively connected as a third conductive path.
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