SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A lower layer reflection preventing film (SL) is formed on each of a plurality of photodiodes (PD) with a laminating film (SL) left thereon, and a side wall (SW) is formed on a side wall of a gate electrode layer (GE) with the laminating film (SL) left on the side wall, by performing selective anisotropic etching to the laminating film (SL) formed to cover over the photodiodes (PD) and the gate electrode layer (GE) of the MOS transistor. An impurity for forming a source/drain region of the MOS transistor is introduced by using a gate electrode layer (GE) and the side wall (SW) as a mask. An upper layer reflection preventing film (AL) is formed at least on the lower layer reflection preventing film (SL) after introducing the impurity. At least the upper layer reflection preventing film (AL) or the lower layer reflection preventing film (SL) is etched so that the thicknesses of the reflection preventing films (AR) on the two photodiodes (PD) are different from each other. Thus, a method for manufacturing the solid-state imaging device which is applicable to miniaturization, has less restriction on the reflection preventing film (AR) and optimizes reflection preventing effects by pixel is provided.