Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy a-particles or ?-photons generated by neutron interaction.
申请公布号
WO2010011859(A8)
申请公布日期
2010.10.28
申请号
WO2009US51576
申请日期
2009.07.23
申请人
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;MAO, SAMUEL, S.;PERRY, DALE, L.