| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of stably and more simply manufacturing a nitride semiconductor light emitting device while preventing a substrate from warping. <P>SOLUTION: The method of manufacturing the nitride semiconductor light emitting device includes: step (A) of forming a buffer layer and an n-type layer in this order on a substrate whose thickness is ≥0.8 cm and ≤20 cm; step (B) of forming an active layer and a p-type layer in this order on the n-type layer; step (C) of forming a current diffusion layer on the p-type layer; step (D) of forming a pad electrode on the current diffusion layer; and step (E) of cutting the substrate in a plane parallel to the substrate surface after fixing the upper part and the lower part in the thickness direction of the substrate. <P>COPYRIGHT: (C)2011,JPO&INPIT |
