发明名称 INTEGRATED CIRCUIT SYSTEM EMPLOYING STRESS MEMORIZATION TRANSFER
摘要 <p>An integrated circuit system that includes: a substrate including a source/drain region defined by a spacer; a gate over the substrate; a gate dielectric between the gate and the substrate; a recrystallized region within the gate and the source/drain region; and a channel exhibiting the characteristics of stress memorization. Fig.2</p>
申请公布号 SG165354(A1) 申请公布日期 2010.10.28
申请号 SG20100065381 申请日期 2008.02.20
申请人 GLOBALFOUNDRIES SINGAPORE PTE. LTD. 发明人 BOONE QUEK ELGIN KIOK;YELEHANKA PRADEEP RAMACHANDRAMURTHY
分类号 主分类号
代理机构 代理人
主权项
地址