发明名称 |
INTEGRATED CIRCUIT SYSTEM EMPLOYING STRESS MEMORIZATION TRANSFER |
摘要 |
<p>An integrated circuit system that includes: a substrate including a source/drain region defined by a spacer; a gate over the substrate; a gate dielectric between the gate and the substrate; a recrystallized region within the gate and the source/drain region; and a channel exhibiting the characteristics of stress memorization. Fig.2</p> |
申请公布号 |
SG165354(A1) |
申请公布日期 |
2010.10.28 |
申请号 |
SG20100065381 |
申请日期 |
2008.02.20 |
申请人 |
GLOBALFOUNDRIES SINGAPORE PTE. LTD. |
发明人 |
BOONE QUEK ELGIN KIOK;YELEHANKA PRADEEP RAMACHANDRAMURTHY |
分类号 |
|
主分类号 |
|
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|