| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an electron beam apparatus of which the electron emission efficiency is high and in which the capacitance between a gate and a cathode is small. <P>SOLUTION: In the electron beam apparatus which is equipped with the gate 5 and the cathode 4, respectively formed on the side surface 2a of an insulating member 2 and an anode arranged on an elongation of a Z direction, the gate 5 and the cathode 4 are shifted from each other in a Y direction and then are arranged so that orthogonal projection of the gate 5 to the anode and orthogonal projection of the cathode 4 to the anode do not overlap each other. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
