| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a wavelength tunable semiconductor laser element whose overall length can be made shorter. <P>SOLUTION: The semiconductor laser element 1A includes a gain region 10 provided on a semiconductor substrate 3 and a reflective region 20 provided on the semiconductor substrate 3 adjacently to the gain region 10, and having wavelength-reflectivity characteristics varying periodically at predetermined wavelength intervals. The gain region 10 includes an active layer 101 where light is generated by current injection, a diffraction grating layer 110 provided along the active layer 101, having a diffraction grating 110a whose grating pitch varies in a light propagation direction, and causing loss of the light generated by the active layer 101, a refractive-index variation layer 109 varying in refractive index by the current injection, an anode electrode 106 for injecting current into the active layer 101, and a plurality of anode electrodes 114 arranged side by side in the light propagation direction to inject current into the refractive-index variation layer 109 independently of the active layer 101. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
