| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a p-type MOSFET having a silicide layer of superior heat resistance in a source-drain region, and to provide a method of fabricating the semiconductor device. SOLUTION: The semiconductor device 100 includes: a gate electrode 12 formed on a semiconductor substrate 2 via a gate insulating film 11; elevated layers 15 formed on both sides of the gate electrode 12 on the semiconductor substrate 2; Si:C layers 16 formed on the elevated layers 15; p-type source-drain regions 19 formed on both sides of the gate electrode 12 and within the semiconductor substrate 2, the elevated layers 15 and Si:C layers 16; and silicide layers 17 formed on the Si:C layers 16. COPYRIGHT: (C)2011,JPO&INPIT
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