发明名称 |
INJECTION METHOD WITH SCHOTTKY SOURCE/DRAIN |
摘要 |
An injection method for non-volatile memory cells with a Schottky source and drain is described. Carrier injection efficiency is controlled by an interface characteristic of silicide and silicon. A Schottky barrier is modified by controlling an overlap of a gate and a source/drain and by controlling implantation, activation and/or gate processes.
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申请公布号 |
US2010271878(A1) |
申请公布日期 |
2010.10.28 |
申请号 |
US20090430817 |
申请日期 |
2009.04.27 |
申请人 |
HSIAO YI-HSUAN;LAI ERH-KUN;LUE HANG-TING |
发明人 |
HSIAO YI-HSUAN;LAI ERH-KUN;LUE HANG-TING |
分类号 |
G11C16/04;H01L21/336;H01L29/792 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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