发明名称 SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide technology for improving the characteristics of a semiconductor device, particularly, for miniaturizing the semiconductor device including a light emitting device. <P>SOLUTION: The flash photographing light emitting device includes a light emitting xenon tube, IGBT for the discharge switch of the xenon tube, a capacitor for discharging the xenon tube, and MOSFET for the charge switch of the capacitor. The semiconductor device SM1 to be used for the light emitting device includes a semiconductor chip CP1 on which the IGBT is formed, a semiconductor chip CP2 on which the MOSFET is formed, a semiconductor chip CP3 on which a driving circuit for the IGBT and a control circuit for the MOSFET are formed, a plurality of leads LD connected thereto, and a package PA sealing all of them. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010244977(A) 申请公布日期 2010.10.28
申请号 JP20090095084 申请日期 2009.04.09
申请人 RENESAS ELECTRONICS CORP 发明人 KONO MAKOTO;BITO KATSUTOSHI;MITAMURA ATSUSHI;KAWANO KOHEI
分类号 F21L4/00;F21Y105/00;G03B15/02;H01L21/336;H01L25/04;H01L25/18;H01L27/088;H01L29/06;H01L29/739;H01L29/78 主分类号 F21L4/00
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