| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To fabricate a MOS transistor that improves electric characteristics by avoiding formation of an interface layer with a gate electrode layer. <P>SOLUTION: The MOS transistor includes a gate electrode, a channel region having a top surface of a gate electrode base, and a dielectric stack 37 interposed between the gate electrode and the top surface of the channel region. The dielectric stack comprises a high-k dielectric layer 31 comprising at least a high-k material, a dielectric layer comprising at least silicon and nitrogen, and an intermediate layer disposed between the high-k dielectric layer and the dielectric layer. The intermediate layer includes the high-k material, silicon, and nitrogen. The gate electrode is made of polysilicon or polysilicon germanium. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
