| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor which has excellent on characteristics and suppresses a rise of an off current. SOLUTION: This thin film transistor includes a first gate electrode disposed on a substrate, a first gate insulating film formed on the first gate electrode, a channel layer stacked on the first gate insulating film so that one side becomes an amorphous silicon layer and the other side becomes a micro crystal silicon layer, source electrodes and drain electrodes disposed across a channel region of the channel layer, a second gate insulating film formed on the channel layer, and a second gate electrode disposed on the second gate insulating film. A thin film transistor is formed such that one gate electrode on the micro crystal silicon layer side of the first gate electrode and the second gate electrode and the source or drain electrode have an offset region therebetween, and the other electrode on the amorphous silicon layer side extends to the offset region. COPYRIGHT: (C)2011,JPO&INPIT
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