SOLID-STATE IMAGING DEVICE

摘要

Adjacent photoelectric conversion units (11) in pixel sections (10) arranged in an array shape, and the photoelectric conversion unit (11) and an amplifying transistor (14) are respectively isolated from each other by an insulation isolation section (22), and the insulation isolation section (22) has a first region (A) in which the amplifying transistor (14) is not arranged between the photoelectric conversion units (11), and a second region (B) in which the amplifying transistor (14) is arranged between said units (11). A first isolation diffusion layer (23) with low concentration is formed below the insulation isolation section (22) of the first region (A), and a second isolation diffusion layer (24) with high concentration and the first isolation diffusion layer (23) with low concentration are formed below the insulation isolation sections (22) of the second region (B). The source/drain region of the amplifying transistor (14) in the second region (B) is formed in a well region (25) which has been formed simultaneously with the second isolation diffusion layer (24).