| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoresist composition having good storage stability and giving a resist which is highly sensitive to i-line, and to provide a method of producing a resist pattern. <P>SOLUTION: A chemically amplified positive photoresist composition is provided, including a component (A) generating an acid by light and a resin component (B) having the solubility with an alkali increased by the acid. The component (A) contains a sulfonium salt expressed by formula (A-1). In formula (A-1), R<SP>1</SP>to R<SP>6</SP>each independently represent an alkyl, hydroxyl, alkoxy, alkylcarbonyl, arylocarbonyl, alkoxycarbonyl, aryloxycarbonyl, arylthiocarbonyl, acyloxy, arylthio, alkylthio, aryl, heterocyclic hydrocarbon, aryloxy, alkylsulfinyl, arylsulfinyl, alkylsulfonyl, arylsulfonyl, hydroxyl(poly)alkyleneoxy, optionally substituted amino, cyano or nitro group or a halogen atom; m<SP>1</SP>to m<SP>6</SP>respectively represent the numbers of R<SP>1</SP>to R<SP>6</SP>; m<SP>1</SP>, m<SP>4</SP>and m<SP>6</SP>each represent an integer of 0 to 5; m<SP>2</SP>, m<SP>3</SP>and m<SP>5</SP>each represent an integer of 0 to 4; and X<SP>-</SP>represents a monovalent polyatomic anion. <P>COPYRIGHT: (C)2011,JPO&INPIT |
