| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon-carbide semiconductor device suppressing degradation of current leakage characteristics and contributing to stabilization of quality and improvement of yield by improving adhesiveness between a silicon-carbide wafer and a carbon protective film formed on a surface of the silicon-carbide wafer and preventing step bunching. <P>SOLUTION: The method includes the steps of: forming an oxidized film (6) on surfaces of silicon-carbide wafers (1, 2) in an oxidizing gas atmosphere or in an oxidizing solution; removing the oxidized film (6) in a reducing gas atmosphere; and forming the carbon protective film 7 on the surfaces of the silicon-carbide wafers (1, 2) from which the oxidized film (6) is removed in a silicon-carbide gas atmosphere. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
