SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To solve such a problem that a portion of the film thickness of a dielectric film of a capacitive element is removed when a photoresist is peeled off, a capacitance value is varied, and a withstand voltage characteristic is deteriorated in a conventional semiconductor device. SOLUTION: In a semiconductor device, a silicon nitride film 12 for use in a dielectric film is formed on the upper surface of a lower electrode 8 of a capacitive element 1 and an upper electrode 15 is formed on the upper surface of the silicon nitride film 12. The upper electrode 15 is formed of a laminate structure of a silicon film 14 and a polycrystalline silicon film 13 protecting the silicon nitride film 12. A portion of the silicon nitride film 12 is removed when the photoresist is peeled off and variations in the capacitance value of the capacitive element 1 and the deterioration of withstand voltage are prevented by this structure. COPYRIGHT: (C)2011,JPO&INPIT