THREE DIMENSIONAL INTEGRATED CIRCUIT INTEGRATION USING DIELECTRIC BONDING FIRST AND THROUGH VIA FORMATION LAST

摘要

A method of implementing three-dimensional (3D) integration of multiple integrated circuit (IC) devices includes forming a first insulating layer (120) over a first IC device; forming a second insulating layer (220) over a second IC device; forming a 3D, bonded IC device by aligning and bonding the first insulating layer to the second insulating layer so as to define a bonding interface (302) therebetween, defining a first set of vias (306) within the 3D bonded IC device, the first set of vias landing on conductive pads (110) located within the first IC device, and defining a second set of vias (306) within the 3D bonded IC device, the second set of vias landing on conductive pads (210) located within the second device, such that the second set of vias passes through the bonding interface (302); and filling the first and second sets of vias with a conductive material (310).