| 摘要 |
PROBLEM TO BE SOLVED: To provide a display device including a thin-film transistor for reducing light radiation to a semiconductor layer to suppress generation of an off-current although extremely simply structured. SOLUTION: The display device has the thin-film transistor formed on a substrate on which an image display part is formed. The thin-film transistor includes: a gate electrode; a gate insulating film formed to cover the gate electrode; a semiconductor layer formed on the gate insulating film so as to overlap with the gate electrode; and a pair of electrodes formed on the semiconductor layer so as to face each other. The semiconductor layer is provided within a region where the gate electrode is formed in a plan view, and formed of a laminate including a crystalline semiconductor layer and an amorphous semiconductor layer sequentially from the gate electrode side. The gate electrode is formed in such a thickness that light transmittance is≤0.3% at least in the region facing the semiconductor layer. COPYRIGHT: (C)2011,JPO&INPIT
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