| 摘要 |
PROBLEM TO BE SOLVED: To form a semiconductor layer thin while simplifying an etching process. SOLUTION: A gate electrode 12 is formed. A gate insulating film 14 is formed covering the gate electrode 12. A semiconductor layer 16 is formed in a region on the gate insulating film 14 which overlaps with at least the gate electrode 12. The semiconductor layer 16 is subjected to plasma processing using gas containing a dopant to increase an impurity concentration of a surface layer 18 of the semiconductor layer 16. A conductive film 20 is formed on the surface layer 18 of the semiconductor layer 16 having been subjected to the plasma processing. The conductive film 20 is etched to form a source electrode 22 and a drain electrode 24. COPYRIGHT: (C)2011,JPO&INPIT
|
