发明名称 |
INTEGRATED CIRCUIT 3D PHASE CHANGE MEMORY ARRAY AND MANUFACTURING METHOD |
摘要 |
A 3D phase change memory device is based on an array of electrode pillars and a plurality of electrode planes that intersect the electrode pillars at interface regions that include memory elements that comprise a programmable phase change memory element and a threshold switching element. The electrode pillars can be selected using two-dimensional decoding, and the plurality of electrode planes can be selected using decoding on a third dimension. |
申请公布号 |
US2010270529(A1) |
申请公布日期 |
2010.10.28 |
申请号 |
US20090430386 |
申请日期 |
2009.04.27 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LUNG HSIANG-LAN |
分类号 |
H01L47/00 |
主分类号 |
H01L47/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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