发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a fuse circuit of which circuit area is reduced, as compared with a conventional one. SOLUTION: A semiconductor device includes the fuse circuit which includes a fuse element and an MOS transistor element whose drain region or source region is electrically connected to one end of the fuse element, in order to supply a current required for melting the fuse element, and which is electrically programmable by selective melting of the fuse element; and the fuse element is positioned on an insulating film directly above the formation region of the MOS transistor element. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010245102(A) 申请公布日期 2010.10.28
申请号 JP20090089150 申请日期 2009.04.01
申请人 SHARP CORP 发明人 HAKOZAKI KENJI
分类号 H01L21/82 主分类号 H01L21/82
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