| 摘要 |
<P>PROBLEM TO BE SOLVED: To enhance sensitivity and reduce cross talk even when a pixel size is fine. <P>SOLUTION: The solid-state imaging element includes a P-type silicon substrate 31, an N-type semiconductor layer 32 on the P-type silicon substrate 31, a plurality of photoelectric conversion parts 3, and a P-type barrier region 35. The photoelectric conversion parts 3 include color filters 44 of either one of R, G, B respectively on a light incident side, and each includes a charge accumulation part 33 formed of a part of the N-type semiconductor layer 32 and accumulating charges generated in response to incident light. The barrier region 35 is formed in the N-type semiconductor layer 32 so as to surround a periphery of each charge accumulation part 33 and have an opening which makes the respective charge accumulation parts 33 in contact with the P-type silicon substrate 31. An area of the opening of the barrier region 35 of the pixel 2 having the color filter 44 of R is larger than areas of the openings of the barrier regions 35 of the pixels 2 having the color filters 44 of G, B. <P>COPYRIGHT: (C)2011,JPO&INPIT |
