| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a power semiconductor device and an apparatus for manufacturing the power semiconductor device, which accurately controls a crystal defect amount. SOLUTION: The method for manufacturing the power semiconductor device includes the processes of: preparing a silicon wafer 2; irradiating the silicon wafer 2 with an electron beam; analyzing the intensity and wavelength of cathode luminescence light emitted from the silicon wafer 2 during the irradiation with the electron beam to inspect an amount of crystal defects of the silicon wafer 2; and irradiating the silicon wafer with the electron beam so that the amount of crystal defects is controlled to a predetermined value through the process of inspecting the amount of crystal defects. COPYRIGHT: (C)2011,JPO&INPIT
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